Iiseli zelanga

Iiseli zelanga zihlulwe zibe yi-crystalline silicon kunye ne-amorphous silicon, phakathi kwazo iiseli ze-crystalline ze-silicon zingahlulwa ngakumbi kwiiseli ze-monocrystalline kunye neeseli ze-polycrystalline;ukusebenza kakuhle kwesilicon ye-monocrystalline kwahlukile kuleyo ye-crystalline silicon.

Ukuhlelwa:

Iiseli ze-silicon ezisetyenziswa ngokuqhelekileyo e-China zinokwahlulwa zibe:

Ikristale enye 125 * 125

Ikristale enye 156 * 156

Polycrystalline 156 * 156

Ikristale enye 150 * 150

Ikristale enye 103 * 103

Polycrystalline 125 * 125

Inkqubo yokwenziwa kwemveliso:

Inkqubo yokuvelisa iiseli zelanga zohlulwe kwi-silicon yokuhlola i-wafer - i-surface texturing kunye ne-pickling - i-diffusion junction - i-dephosphorization ye-silicon yeglasi - i-plasma etching kunye ne-pickling - i-anti-reflection coating - ukuprintwa kwesikrini - i-Rapid sintering, njl.

1. Ukuhlolwa kwe-Silicon wafer

Ii-silicon wafers ngabathwali beeseli zelanga, kwaye umgangatho wee-silicon wafers umisela ngokuthe ngqo ukuguqulwa kokusebenza kweeseli zelanga.Ke ngoko, kuyafuneka ukuba kuhlolwe ii-wafers ze-silicon ezingenayo.Le nkqubo isetyenziswa ikakhulu kumlinganiselo we-intanethi wezinye iiparameters zobugcisa be-silicon wafers, ezi parameters ikakhulu zibandakanya ukungalingani komphezulu we-wafer, ubomi bomxhasi abambalwa, ukuxhathisa, uhlobo lwe-P / N kunye ne-microcracks, njl. , ukuhanjiswa kwe-silicon wafer, inxalenye yokudibanisa inkqubo kunye neemodyuli ezine zokufumanisa.Phakathi kwazo, i-photovoltaic silicon wafer detector ibona ukungalingani komphezulu we-silicon wafer, kwaye ngaxeshanye ibona imbonakalo yeeparameters ezifana nobukhulu kunye ne-diagonal ye-silicon wafer;imodyuli yokufumanisa i-micro-crack isetyenziselwa ukukhangela ii-micro-cracks zangaphakathi ze-silicon wafer;Ukongeza, kukho iimodyuli ezimbini zokuFumana, enye yeemodyuli zovavanyo lwe-intanethi isetyenziswa ikakhulu ukuvavanya ukuxhathisa isambuku se-silicon wafers kunye nohlobo lwe-silicon wafers, kunye nenye imodyuli isetyenziselwa ukubona ubuncinci bomntu ophethe ubomi be-silicon wafers.Ngaphambi kokuba kufunyaniswe ubomi obuncinci bokuthwala kunye nokuxhathisa, kuyafuneka ukufumanisa i-diagonal kunye ne-micro-cracks ye-silicon wafer, kwaye ususe ngokuzenzekelayo i-silicon yaphahleni eyonakalisiweyo.Izixhobo zokuhlola i-silicon wafer zinokulayisha ngokuzenzekelayo kwaye zikhuphe ii-wafers, kwaye zinokubeka iimveliso ezingafanelekanga kwindawo esisigxina, ngaloo ndlela iphucula ukuchaneka kokuhlolwa kunye nokusebenza kakuhle.

2. Umphezulu uthungelwe

Ukulungiswa kokuthungwa kwe-silicon ye-monocrystalline kukusebenzisa i-anisotropic etching ye-silicon ukwenza izigidi zeephiramidi ze-tetrahedral, oko kukuthi, izakhiwo zephiramidi, kumphezulu wesentimitha nganye yesikwere se-silicon.Ngenxa yokubonakaliswa okuphindaphindiweyo kunye nokuchaswa kokukhanya kwesiganeko ebusweni, ukunyuswa kokukhanya kwanda, kwaye i-short-circuit current kunye nokuguqulwa kwebhetri kuphuculwe.Isisombululo se-anisotropic etching se-silicon sihlala sisisombululo esishushu se-alkaline.Iialkali ezikhoyo yi-sodium hydroxide, i-potassium hydroxide, i-lithium hydroxide kunye ne-ethylenediamine.Uninzi lwe-silicon ye-suede ilungiswa ngokusebenzisa isisombululo esincinci se-dilute ye-sodium hydroxide kunye ne-concentration ye-1%, kunye nokushisa kwe-etching yi-70-85 °C.Ukuze ufumane i-suede efanayo, i-alcohols ezifana ne-ethanol kunye ne-isopropanol kufuneka kwakhona zongezwe kwisisombululo njengama-agent adibeneyo ukukhawuleza ukubola kwe-silicon.Ngaphambi kokuba i-suede ilungiswe, i-wafer ye-silicon kufuneka ifakwe kwi-preliminary surface etching, kwaye malunga ne-20-25 μm ifakwe nge-alkaline okanye isisombululo se-acidic etching.Emva kokuba i-suede ifakwe, ukucocwa kweekhemikhali ngokubanzi kuyenziwa.Iziqwenga ze-silicon ezilungiselelwe umphezulu akufanele zigcinwe emanzini ixesha elide ukuthintela ukungcoliseka, kwaye kufuneka zisasazwe ngokukhawuleza.

3. Iqhina lokusasaza

Iiseli zelanga zidinga indawo enkulu ye-PN ye-junction ukuze iqonde ukuguqulwa kwamandla okukhanya kumandla ombane, kunye ne-diffusion furnace sisixhobo esikhethekileyo sokuvelisa i-PN junction yeeseli zelanga.I-furnace ye-tubular diffusion ikakhulukazi iqulunqwe ngamacandelo amane: iindawo eziphezulu kunye nezisezantsi zenqanawa ye-quartz, i-exhaust gas room, i-furnace body part kunye ne-gas cabinet part.Ukusasazwa ngokubanzi kusebenzisa i-phosphorus oxychloride umthombo wolwelo njengomthombo wokusasaza.Faka i-wafer ye-silicon yohlobo lwe-P kwisikhongozelo se-quartz se-tubular diffusion furnace, kwaye usebenzise i-nitrogen ukuzisa i-phosphorus oxychloride kwisikhongozeli se-quartz kubushushu obuphezulu obungama-850-900 degrees celcius.I-phosphorus oxychloride isabela kunye ne-silicon wafer ukufumana i-phosphorus.athom.Emva kwexesha elithile, iiathom ze-phosphorus zingena kumphezulu we-silicon wafer ukusuka macala onke, kwaye zingene kwaye zisasazeke kwisiqwenga se-silicon ngezikhewu phakathi kwee-athom ze-silicon, zenza ujongano phakathi kwe-N-type semiconductor kunye ne-P- chwetheza isemiconductor, oko kukuthi, isidibaniso sePN.I-PN junction eveliswa yile ndlela inokufana okuhle, ukungafani kokumelana nephepha kungaphantsi kwe-10%, kwaye ixesha lokuphila elincinci linokuba likhulu kune-10ms.Ukuqulunqwa kwe-PN junction yeyona nkqubo isisiseko kunye neyona nto ibalulekileyo kwimveliso yeeseli zelanga.Ngenxa yokuba ukubunjwa kwe-PN junction, i-electron kunye nemingxuma ayibuyeli kwiindawo zabo zangaphambili emva kokuhamba, ukwenzela ukuba i-current iqulunqwe, kwaye i-current ikhutshwe yintambo, ehamba ngokuthe ngqo ngoku.

4. Iglasi ye-silicate ye-Dephosphorylation

Le nkqubo isetyenziselwa inkqubo yokuvelisa iiseli zelanga.Ngokufakwa kweekhemikhali, i-silicon wafer intywiliselwa kwisisombululo se-hydrofluoric acid ukuvelisa ukusabela kweekhemikhali ukuvelisa i-soluble complex complex hexafluorosilicic acid ukususa inkqubo yokusasaza.Umaleko weglasi ye-phosphosilicate eyenziwe kumphezulu we-silicon wafer emva kokudibana.Ngexesha lenkqubo yokusabalalisa, i-POCL3 iphendula kunye ne-O2 ukwenza i-P2O5 efakwe kumphezulu we-silicon wafer.I-P2O5 iphendula kunye ne-Si ukuvelisa i-SiO2 kunye ne-athomu ye-phosphorus, Ngale ndlela, umaleko we-SiO2 oqulethe izinto ze-phosphorus zenziwe kumphezulu we-silicon wafer, ebizwa ngokuba yiglasi ye-phosphosilicate.Izixhobo zokususa iglasi ye-silicate ye-phosphorous ngokubanzi iqulunqwe ngumzimba oyintloko, itanki yokucoca, inkqubo ye-servo drive, ingalo yomatshini, inkqubo yokulawula umbane kunye nenkqubo yokusabalalisa i-asidi ngokuzenzekelayo.Eyona mithombo yamandla i-hydrofluoric acid, initrogen, umoya oxinanisiweyo, amanzi acocekileyo, umoya wokukhupha ubushushu kunye namanzi amdaka.I-Hydrofluoric acid inyibilikisa i-silica kuba i-asidi ye-hydrofluoric idibana ne-silica ukuvelisa igesi eguquguqukayo yesilicon tetrafluoride.Ukuba i-hydrofluoric acid igqithise, i-silicon tetrafluoride eveliswa yi-reaction iya kusabela ngakumbi nge-hydrofluoric acid ukwenza i-soluble complex, i-hexafluorosilicic acid.

5. I-Plasma etching

Ukusukela ngexesha lenkqubo yokusasaza, nokuba i-back-to-back diffusion yamkelwe, i-phosphorus ngokuqinisekileyo iya kusasazwa kuzo zonke iindawo ezibandakanya imiphetho yesiqwenga se-silicon.Ii-electron ezifotthiweyo eziqokelelwe kwicala langaphambili le-PN junction ziya kuhamba ecaleni kwendawo esemaphethelweni apho i-phosphorus isasazwa ngasemva kwi-junction ye-PN, ibangela isiphaluka esifutshane.Ke ngoko, i-silicon edibeneyo ejikeleze iseli yelanga kufuneka ifakwe ukususa i-PN junction kumda weseli.Le nkqubo idla ngokusetyenziswa kusetyenziswa ubuchule be-plasma etching.I-Plasma etching ikwimo yoxinzelelo oluphantsi, iimolekyuli zomzali zerhasi esebenzayo iCF4 ziyachulumanca ngamandla kanomathotholo ukuvelisa iionization kunye nokwenza iplasma.I-Plasma yenziwe ngee-electron ezihlawuliswayo kunye nee-ion.Ngaphantsi kweempembelelo ze-electron, igesi kwigumbi lokuphendula inokuthatha amandla kwaye yenze inani elikhulu lamaqela asebenzayo ngaphezu kokuguqulwa kwi-ion.Amaqela asebenzayo asebenzayo afikelela kumphezulu we-SiO2 ngenxa yokusasazwa okanye phantsi kwesenzo sentsimi yombane, apho asabela ngekhemikhali kunye nomphezulu wezinto eziza kufakwa, kwaye zenze iimveliso eziguquguqukayo zokusabela ezahlula kumphezulu wezinto eziza kuba. zichwethelwe, kwaye zimpontshelwa ngaphandle komngxunya ngenkqubo yevacuum.

6. I-anti-reflection coating

Ukubonakaliswa kwendawo yesilicon epholisiweyo yi-35%.Ukuze kuncitshiswe ukubonakaliswa komphezulu kunye nokuphucula ukusebenza kakuhle kokuguqulwa kweseli, kuyimfuneko ukubeka umaleko wefilimu ye-silicon nitride anti-reflection.Kwimveliso yoshishino, izixhobo ze-PECVD zihlala zisetyenziselwa ukulungiselela iifilimu ezichasene ne-reflection.I-PECVD yiplasma ephuculweyo yokubeka umphunga wekhemikhali.Umgaqo wayo wobugcisa kukusebenzisa iplasma yobushushu obuphantsi njengomthombo wamandla, isampuli ibekwe kwi-cathode yokukhutshwa okukhanyayo phantsi koxinzelelo oluphantsi, ukukhutshwa okukhanyayo kusetyenziselwa ukufudumeza isampuli kwiqondo lokushisa elimiselweyo, kwaye ngoko inani elifanelekileyo iigesi ezisebenzayo i-SiH4 kunye ne-NH3 ziyaziswa.Emva koluhlu lwee-chemical reactions kunye ne-plasma reactions, ifilimu yesimo esiqinileyo, oko kukuthi, ifilimu ye-silicon nitride, yenziwa kumphezulu wesampuli.Ngokubanzi, ubukhulu befilimu efakwe yile ndlela yokubeka umphunga we-plasma-ephuculweyo malunga ne-70 nm.Iifilimu zale ngqindilili zinomsebenzi we-optical.Ukusebenzisa umgaqo wokuphazamiseka kwefilimu encinci, ukubonakaliswa kokukhanya kunokuncitshiswa kakhulu, i-short-circuit current kunye nemveliso yebhetri yanda kakhulu, kwaye ukusebenza kakuhle kuphuculwe kakhulu.

7. ukuprintwa kwesikrini

Emva kokuba iseli yelanga idlule kwiinkqubo zokubhaliweyo, ukusabalalisa kunye ne-PECVD, i-PN junction yenziwe, enokuvelisa ngoku phantsi kokukhanya.Ukuze kuthunyelwe ngaphandle i-current eveliswayo, kuyimfuneko ukwenza i-electrodes efanelekileyo kunye nembi ebusweni bebhetri.Kukho iindlela ezininzi zokwenza i-electrode, kwaye ukuprintwa kwesikrini yeyona nkqubo iqhelekileyo yokuvelisa ukwenza ii-electrode zeseli zelanga.Ukuprintwa kwesikrini kukuprinta ipateni emiselweyo kwi-substrate ngokusebenzisa i-embossing.Isixhobo senziwe ngamacandelo amathathu: isilivere-aluminiyam yokuprinta emva kwebhetri, ukuprinta kwe-aluminiyam ngasemva kwebhetri, kunye nokuprintwa kwesiliva-unamathisele phambi kwebhetri.Umgaqo wayo wokusebenza ngulo: sebenzisa i-mesh yepateni yesikrini ukungena kwi-slurry, faka uxinzelelo oluthile kwinxalenye ye-slurry yesikrini kunye ne-scraper, kwaye uye kwelinye icala lesikrini ngaxeshanye.I-inki icudiswa ukusuka kumnatha wesahlulo segraphic kwi-substrate yi-squeegee njengoko ihamba.Ngenxa yempembelelo ye-viscous ye-paste, i-imprint igxininiswe ngaphakathi koluhlu oluthile, kwaye i-squeegee isoloko inxibelelana nomgca kunye neplate yokushicilela isikrini kunye ne-substrate ngexesha lokushicilela, kwaye umgca woqhagamshelwano uhamba kunye nokuhamba kwe-squeegee ukugqiba. isibetho sokushicilela.

8. sintering ngokukhawuleza

Ikhusi yesilicon eprintiweyo ayinakusetyenziswa ngokuthe ngqo.Kufuneka ifakwe ngokukhawuleza kwiziko elitshisayo ukutshisa i-organic resin binder, ishiya phantse i-electrode yesilivere esulungekileyo ebambelele ngokusondeleyo kwi-silicon wafer ngenxa yesenzo seglasi.Xa iqondo lobushushu le-electrode yesilivere kunye nesilicon yecrystalline ifikelela kubushushu be-eutectic, iiathom zesilicon ekristale ziyadityaniswa kwizinto ezinyibilikisiweyo ze-electrode yesilivere ngokomlinganiselo othile, ngaloo ndlela zenza uqhagamshelwano lwe-ohmic lwe-electrode ephezulu nasezantsi, kunye nokuphucula isekethe evulekileyo. i-voltage kunye nokuzaliswa kwento yeseli.Ipharamitha ephambili kukuyenza ibe neempawu zokuchasana ukuphucula ukuguqulwa kokusebenza kweseli.

I-oven sintering yahlulwe yangamanqanaba amathathu: pre-sintering, sintering, kunye nokupholisa.Injongo yesigaba sangaphambi kwe-sintering kukubola nokutshisa i-polymer binder kwi-slurry, kwaye izinga lokushisa likhuphuka kancane kweli nqanaba;kwinqanaba le-sintering, iimpendulo ezahlukeneyo zomzimba kunye neekhemikhali zigqitywe kumzimba we-sintered ukwenza isakhiwo sefilimu esichasayo, sisenza ukuba sichase ngokwenene., ubushushu bufikelela incopho kweli nqanaba;kwinqanaba lokupholisa kunye nokupholisa, iglasi ipholile, iqiniswe kwaye iqiniswe, ukwenzela ukuba isakhiwo sefilimu esichasayo sinamathele ngokuthe ngqo kwi-substrate.

9. Iiperipherals

Kwinkqubo yokuveliswa kweeseli, izibonelelo zeperipheral ezifana nombane, umbane, ubonelelo lwamanzi, idrainage, i-HVAC, ivacuum, kunye nomphunga okhethekileyo nazo ziyafuneka.Ukukhuselwa komlilo kunye nezixhobo zokusingqongileyo nazo zibaluleke kakhulu ukuqinisekisa ukhuseleko kunye nophuhliso oluzinzileyo.Ngomgca wokuvelisa iseli yelanga kunye nemveliso yonyaka ye-50MW, ukusetyenziswa kwamandla kwenkqubo kunye nezixhobo zamandla kuphela malunga ne-1800KW.Ubungakanani benkqubo yamanzi acocekileyo malunga neetoni ezili-15 ngeyure, kwaye iimfuno zomgangatho wamanzi zihlangabezana nomgangatho we-EW-1 wobugcisa bebakala lamanzi e-elektroniki yaseTshayina GB/T11446.1-1997.Ubungakanani benkqubo yokupholisa amanzi kwakhona malunga neetoni ezili-15 ngeyure, ubungakanani bamasuntswana kumgangatho wamanzi akufanele bube mkhulu kune-microns ezili-10, kwaye ubushushu bokubonelela ngamanzi kufuneka bube yi-15-20 °C.Umthamo wokukhupha ivacuum malunga ne-300M3/H.Kwangaxeshanye, malunga ne-20 cubic metres zeitanki zokugcina initrogen kunye ne-10 cubic metres zamatanki okugcina ioksijini nazo ziyafuneka.Ukuthathela ingqalelo imiba yokhuseleko yeegesi ezikhethekileyo ezifana ne-silane, kuyafuneka kwakhona ukuseta igumbi elikhethekileyo legesi ukuqinisekisa ngokupheleleyo ukhuseleko lokuvelisa.Ukongeza, iinqaba zokutshisa i-silane kunye nezikhululo zokucoca ilindle nazo ziyimfuneko yokuvelisa iiseli.